Lu, H., Guo, Y., & Robertson, J. (2019). Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys. Physical Review Materials, 3(9)
Lu, H., Guo, Y., Li, H., & Robertson, J. (2019). Modeling of surface gap state passivation and Fermi level de-pinning in solar cells. Applied Physics Letters, 114(22), 222106
Zhang, Z., Guo, Y., & Robertson, J. (2019). Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study. Microelectronic Engineering, 111039
Zhang, Z., Guo, Y., & Robertson, J. (2019). Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces. Applied Physics Letters, 114(16), 161601
Guo, Y., Li, H., Clark, S., Robertson, J., & Guo, Y. (2019). Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators. The Journal of Physical Chemistry C, 123(9), 5562-5570.
Yang, Y., Xu, M., Jia, S., Wang, B., Xu, L., Wang, X., Liu, H., Liu, Y., Guo, Y., Wang, L., Duan, S., Liu, K., Zhu, M., Pei, J., Duan, W., Liu, D., & Li, H. (2021). A new opportunity for the emerging tellurium semiconductor: making resistive switching devices. Nature Communications, 12(1), 6081
Lu, H., Guo, Y., & Robertson, J. (2021). Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions. ACS Applied Materials & Interfaces, 13(39), 47226-47235.
Guo, Y., Zhang, Z., & Robertson, J. (2021). High-Throughput Electronic Structures and Ferroelectric Interfaces of HfO2 by GGA+U(d,p) Calculations. physica status solidi (RRL) – Rapid Research Letters, 15(10), 2100295
Zhang, Z., Guo, Y., & Robertson, J. (2020). Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium. Journal of Applied Physics, 128(21), 215704
Zhang, Z., Guo, Y., & Robertson, J. (2020). Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers. The Journal of Physical Chemistry C, 124(36), 19698-19703.
Zhang, Z., Guo, Y., & Robertson, J. (2020). Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials. Journal of Applied Physics, 127(15), 155301
Liu, Y., Wang, T., Robertson, J., Luo, J., Guo, Y., & Liu, D. (2020). Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony. The Journal of Physical Chemistry C, 124(13), 7441-7448.
Lu, H., Guo, Y., & Robertson, J. (2019). Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys. Physical Review Materials, 3(9)
Lu, H., Guo, Y., Li, H., & Robertson, J. (2019). Modeling of surface gap state passivation and Fermi level de-pinning in solar cells. Applied Physics Letters, 114(22), 222106
Zhang, Z., Guo, Y., & Robertson, J. (2019). Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study. Microelectronic Engineering, 111039
Zhang, Z., Guo, Y., & Robertson, J. (2019). Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces. Applied Physics Letters, 114(16), 161601
Guo, Y., Li, H., Clark, S., Robertson, J., & Guo, Y. (2019). Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators. The Journal of Physical Chemistry C, 123(9), 5562-5570.
Lu, H., Guo, Y., & Robertson, J. (2018). Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2. Applied Physics Letters, 112(6), 062105
Lu, H., Guo, Y., & Robertson, J. (2017). Charge transfer doping of graphene without degrading carrier mobility. Journal of Applied Physics, 121(22), 224304
Sedghi, N., Li, H., Brunell, I., Dawson, K., Potter, R., Guo, Y., Gibbon, J., Dhanak, V., Zhang, W., Zhang, J., Robertson, J., Hall, S., Chalker, P., & Guo, Y. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902
Li, H., Guo, Y., & Robertson, J. (2017). Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge. Scientific Reports, 7(1)
Park, J., Sanne, A., Guo, Y., Amani, M., Zhang, K., Movva, H., Robinson, J., Javey, A., Robertson, J., Banerjee, S., & Kummel, A. (2017). Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Science Advances, 3(10), e1701661
Guo, Y., Liu, D., & Robertson, J. (2015). 3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides. ACS Applied Materials & Interfaces, 7(46), 25709-25715.